Leakage Current In Diode Is Due To

March 15, 2018

Under reverse bias the current is due to generation. The electrons and positrons which exist near the p n boundary are constantly re combining.

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Leakage current at least in my general definition is current that flows in a device that is thought to be in a off mode where ideally no current would flow.

Leakage current in diode is due to. When a semiconductor device is reverse biased it should not conduct any current however due to an increased barrier potential the free electrons on the p side are dragged to the batterys positive terminal while holes on the n side are dragged to the batterys negative terminal. One a physical property of the diode known as free carrier recombination. For a reverse biased diode the leakage current is the reverse leakage current measur.

This creates a fixed current known as the saturation current. The leakage current in a crystal diode is due to a minority carriers b majority carriers c junction capacitance d none of the above. For all basic purposes leakage current is very small and thus is normally negligible.

Under forward bias the diode current is due to recombination. In addition to reading the questions and answers on my site i would suggest you to check the following on amazon as well. This recombination can occur within the quasi neutral regions within the depletion region or at the metal semiconductor ohmic contacts.

Reverse leakage current in a semiconductor device is the current from that semiconductor device when the device is reverse biased. But if reverse voltage is kept in a tolerable range between 0 and breakdown the current is very small. The leakage current only becomes very serious when the diodes reverse voltage reaches breakdown which causes an avalanche of current to flow.

Similar to capacitors there are a number of factors that come into play in determining the level of leakage current. Multiple choice questions and answers on semiconductor diode. Semiconductor devices leakage current.

The reverse biased leakage of a diode is due to to two things. When a diode is reverse biased the width of the depletion region increases. Generally this condition is required to restrict the current carrier accumulation near the junction.

Diodes can present substantial leakage currents when in a reverse voltage condition this is often referred to as reverse current. An important conduction limitation of pn junction diode is leakage current.